검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
MBE growth and doping of AlGaP Tremblay R, Burin JP, Rohel T, Gauthier JP, Almosni S, Quinci T, Letoublon A, Leger Y, Le Corre A, Bertru N, Durand O, Cornet C Journal of Crystal Growth, 466, 6, 2017 |
| 2 |
Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells Almosni S, Rale P, Cornet C, Perrin M, Lombez L, Letoublon A, Tavernier K, Levallois C, Rohel T, Bertru N, Guillemoles JF, Durand O Solar Energy Materials and Solar Cells, 147, 53, 2016 |
| 3 |
Nitrogen-phosphorus competition in the molecular beam epitaxy of GaPN Kuyyalil J, Thanh TN, Quinci T, Almosni S, Letoublon A, Rohel T, Bertru N, Le Corre A, Durand O, Cornet C Journal of Crystal Growth, 377, 17, 2013 |
| 4 |
Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates Thanh TN, Robert C, Giudicelli E, Letoublon A, Cornet C, Ponchet A, Rohel T, Balocchi A, Micha JS, Perrin M, Loualiche S, Marie X, Bertru N, Durand O, Le Corre A Journal of Crystal Growth, 378, 25, 2013 |
| 5 |
Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster Quinci T, Kuyyalil J, Thanh TN, Wang YP, Almosni S, Letoublon A, Rohel T, Tavernier K, Chevalier N, Dehaese O, Boudet N, Berar JF, Loualiche S, Even J, Bertru N, Le Corre A, Durand O, Cornet C Journal of Crystal Growth, 380, 157, 2013 |
| 6 |
Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers Thanh TN, Robert C, Letoublon A, Cornet C, Quinci T, Giudicelli E, Almosni S, Boudet N, Ponchet A, Kuyyalil J, Danila M, Durand O, Bertru N, Le Corre A Thin Solid Films, 541, 36, 2013 |
| 7 |
Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering Guo W, Bondi A, Cornet C, Letoublon A, Durand O, Rohel T, Boyer-Richard S, Bertru N, Loualiche S, Even J, Le Corre A Applied Surface Science, 258(7), 2808, 2012 |
| 8 |
X-ray study of antiphase domains and their stability in MBE grown GaP on Si Letoublon A, Guo W, Cornet C, Boulle A, Veron M, Bondi A, Durand O, Rohel T, Dehaese O, Chevalier N, Bertru N, Le Corre A Journal of Crystal Growth, 323(1), 409, 2011 |
| 9 |
Critical thickness for InAs quantum dot formation on (311)B InP substrates Caroff P, Bertru N, Lu W, Elias G, Dehaese O, Leoublon A, Le Corre A Journal of Crystal Growth, 311(9), 2626, 2009 |
| 10 |
Self-assembled InAs quantum dots grown on InP (311)B substrates: Role of buffer layer and amount of InAs deposited Alghoraibi I, Rohel T, Bertru N, Le Corre A, Letoublon A, Caroff P, Dehaese O, Loualiche S Journal of Crystal Growth, 293(2), 263, 2006 |