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Proceedings of the 18th International Conference on Metal Organic Vapor Phase Epitaxy Preface Biefeld RM Journal of Crystal Growth, 464, 1, 2017 |
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The impact of growth parameters on the formation of InAs quantum dots on GaAS(100) by MOCVD Cederberg JG, Kaatz FH, Biefeld RM Journal of Crystal Growth, 261(2-3), 197, 2004 |
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ICMOVPE-XII - The 12th International Conference on Metalorganic Vapor Phase Epitaxy - Introduction Biefeld RM, Stringfellow GB Journal of Crystal Growth, 272(1-4), 1, 2004 |
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The preparation of InGa(As)Sb and Al(Ga)AsSb films and diodes on GaSb for thermophotovoltaic applications using metal-organic chemical vapor deposition Cederberg JG, Hafich MJ, Biefeld RM, Palmisiano M Journal of Crystal Growth, 248, 289, 2003 |
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Inductively coupled plasma reactive ion etching of GaInAsSb and AlGaAsSb for quaternary antimonide multiple interconnected module thermophotovoltaics Peake GM, Shul RJ, Ashby CIH, Cederberg JG, Hafich MJ, Biefeld RM, Palmisiano MN Journal of Vacuum Science & Technology B, 21(2), 843, 2003 |
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Common n- and p-contact for serial wiring of quaternary antimonide monolithic interconnected module thermophotovoltaic devices Peake GM, Cederberg JG, Hafich MJ, Kurtz SR, Biefeld RM, Palmasiano MN Journal of the Electrochemical Society, 149(7), G416, 2002 |
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The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition Biefeld RM, Cederberg JG, Peake GM, Kurtz SR Journal of Crystal Growth, 225(2-4), 384, 2001 |
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Growth of InSb on GaAs using InAlSb buffer layers Biefeld RM, Phillips JD Journal of Crystal Growth, 209(4), 567, 2000 |
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InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition Biefeld RM, Phillips JD, Kurtz SR Journal of Crystal Growth, 211(1-4), 400, 2000 |
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Nanometer-scale compositional variations in III-V semiconductor heterostructures characterized by scanning tunneling microscopy Yu ET, Zuo SL, Bi WG, Tu CW, Allerman AA, Biefeld RM Journal of Vacuum Science & Technology A, 17(4), 2246, 1999 |