화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Proceedings of the 18th International Conference on Metal Organic Vapor Phase Epitaxy Preface
Biefeld RM
Journal of Crystal Growth, 464, 1, 2017
2 The impact of growth parameters on the formation of InAs quantum dots on GaAS(100) by MOCVD
Cederberg JG, Kaatz FH, Biefeld RM
Journal of Crystal Growth, 261(2-3), 197, 2004
3 ICMOVPE-XII - The 12th International Conference on Metalorganic Vapor Phase Epitaxy - Introduction
Biefeld RM, Stringfellow GB
Journal of Crystal Growth, 272(1-4), 1, 2004
4 The preparation of InGa(As)Sb and Al(Ga)AsSb films and diodes on GaSb for thermophotovoltaic applications using metal-organic chemical vapor deposition
Cederberg JG, Hafich MJ, Biefeld RM, Palmisiano M
Journal of Crystal Growth, 248, 289, 2003
5 Inductively coupled plasma reactive ion etching of GaInAsSb and AlGaAsSb for quaternary antimonide multiple interconnected module thermophotovoltaics
Peake GM, Shul RJ, Ashby CIH, Cederberg JG, Hafich MJ, Biefeld RM, Palmisiano MN
Journal of Vacuum Science & Technology B, 21(2), 843, 2003
6 Common n- and p-contact for serial wiring of quaternary antimonide monolithic interconnected module thermophotovoltaic devices
Peake GM, Cederberg JG, Hafich MJ, Kurtz SR, Biefeld RM, Palmasiano MN
Journal of the Electrochemical Society, 149(7), G416, 2002
7 The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition
Biefeld RM, Cederberg JG, Peake GM, Kurtz SR
Journal of Crystal Growth, 225(2-4), 384, 2001
8 Growth of InSb on GaAs using InAlSb buffer layers
Biefeld RM, Phillips JD
Journal of Crystal Growth, 209(4), 567, 2000
9 InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition
Biefeld RM, Phillips JD, Kurtz SR
Journal of Crystal Growth, 211(1-4), 400, 2000
10 Nanometer-scale compositional variations in III-V semiconductor heterostructures characterized by scanning tunneling microscopy
Yu ET, Zuo SL, Bi WG, Tu CW, Allerman AA, Biefeld RM
Journal of Vacuum Science & Technology A, 17(4), 2246, 1999