화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Growth of GaP and AlGaP on GaP(111) B using gas-source molecular-beam-epitaxy
Barakat JB, Dadgostar S, Hestroffer K, Bierwagen O, Trampert A, Hatami F
Journal of Crystal Growth, 477, 91, 2017
2 Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes
Tsai MY, Bierwagen O, Speck JS
Thin Solid Films, 605, 186, 2016
3 Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films
Frischbier MV, Wardenga HF, Weidner M, Bierwagen O, Jia JJ, Shigesato Y, Klein A
Thin Solid Films, 614, 62, 2016
4 Perovskite Sr-Doped LaCrO3 as a New p-Type Transparent Conducting Oxide
Zhang KHL, Du YG, Papadogianni A, Bierwagen O, Sallis S, Piper LFJ, Bowden ME, Shutthanandan V, Sushko PV, Chambers SA
Advanced Materials, 27(35), 5191, 2015
5 beta-Ga2O3 growth by plasma-assisted molecular beam epitaxy
Tsai MY, Bierwagen O, White ME, Speck JS
Journal of Vacuum Science & Technology A, 28(2), 354, 2010
6 Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm(2) V-1 s(-1)
Son J, Moetakef P, Jalan B, Bierwagen O, Wright NJ, Engel-Herbert R, Stemmer S
Nature Materials, 9(6), 482, 2010