검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Back-to-back Interface diodes induced symmetrical negative differential resistance and reversible bipolar resistive switching in beta-CuSCN trigonal pyramid micro/nanoarray Chen WL, Zhao J, Liu B, Cheng BC, Xiao YH, Lei SJ Applied Surface Science, 480, 13, 2019 |
| 2 |
Effect of fatigue fracture on the resistive switching of TiO2-CuO film/ITO flexible memory device Li JC, Chen B, Qian Y Current Applied Physics, 18(9), 953, 2018 |
| 3 |
Effect of fatigue fracture on the resistive switching of TiO2-CuO film/ITO flexible memory device Li JC, Chen B, Qian Y Current Applied Physics, 18(9), 953, 2018 |
| 4 |
Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p(+)-Si memory device Kim TH, Kim S, Kim H, Kim MH, Bang S, Cho S, Park BG Solid-State Electronics, 140, 51, 2018 |
| 5 |
Bipolar switching properties of amorphous TiO2 thin film grown on TiN/Si substrate Lee BS, Kim BY, Lee JH, Yoo JH, Hong K, Nahm S Current Applied Physics, 14(12), 1825, 2014 |