| 1 |
Three-terminal heterojunction bipolar transistor solar cells with non-ideal effects: Efficiency limit and parametric optimum selection
Zhang X, Ang YS, Ye ZL, Su SH, Chen JC, Ang LK
Energy Conversion and Management, 188, 112, 2019 |
| 2 |
Hot-carrier-induced current capability degradation and optimization for lateral IGBT on thick SOI substrate
Zhang CW, Li Y, Yue WJ, Fu XQ, Li ZM
Solid-State Electronics, 145, 34, 2018 |
| 3 |
Experimental DC extraction of the thermal resistance of bipolar transistors taking into account the Early effect
d'Alessandro V
Solid-State Electronics, 127, 5, 2017 |
| 4 |
Steep subthreshold slope characteristics of body tied to gate NMOSFET in partially depleted SOI
Song L, Hu ZY, Liu ZL, Xin HW, Zhang ZX, Zou SC
Solid-State Electronics, 130, 15, 2017 |
| 5 |
The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology
Tsai YC, Gong J, Chan WC, Wu SY, Lien C
Solid-State Electronics, 132, 80, 2017 |
| 6 |
Efficient light output power for InGaP/GaAs heterojunction bipolar transistors incorporated with InGaAs quantum wells
Huang TH, Wu MC
Solid-State Electronics, 121, 12, 2016 |
| 7 |
Correlated noise in bipolar transistors: Model implementation issues
Huszka Z, Chakravorty A
Solid-State Electronics, 114, 69, 2015 |
| 8 |
Automatic TCAD model calibration for multi-cellular Trench-IGBTs
Maresca L, Breglio G, Irace A
Solid-State Electronics, 91, 36, 2014 |
| 9 |
A novel BEM-LIGBT with high current density on thin SOI layer for 600 V HVIC
Zhu J, Sun WF, Chen J, Lu SL, Zhang S, Su W
Solid-State Electronics, 100, 33, 2014 |
| 10 |
Amorphous silicon germanium carbide photo sensitive bipolar junction transistor with a base-contact and a continuous tunable high current gain
Bablich A, Merfort C, Eliasz J, Schafer-Eberwein H, Haring-Bolivar P, Boehm M
Thin Solid Films, 558, 430, 2014 |
