검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
A Built-In Self-Test Structure (BIST) for Resistive RAMs characterization: Application to bipolar OxRRAM Aziza H, Bocquet M, Moreau M, Portal JM Solid-State Electronics, 103, 73, 2015 |
| 2 |
Shape memory effect and properties memory effect of polyurethane Farzaneh S, Fitoussi J, Lucas A, Bocquet M, Tcharkhtchi A Journal of Applied Polymer Science, 128(5), 3240, 2013 |
| 3 |
Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate Deleruyelle D, Putero M, Ouled-Khachroum T, Bocquet M, Coulet MV, Boddaert X, Calmes C, Muller C Solid-State Electronics, 79, 159, 2013 |
| 4 |
Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up Hraziia, Makosiej A, Palma G, Portal JM, Bocquet M, Thomas O, Clermidy F, Reyboz M, Onkaraiah S, Muller C, Deleruyelle D, Vladimirescu A, Amara A, Anghel C Solid-State Electronics, 90, 99, 2013 |
| 5 |
Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory Cabout T, Buckley J, Cagli C, Jousseaume V, Nodin JF, de Salvo B, Bocquet M, Muller C Thin Solid Films, 533, 19, 2013 |
| 6 |
Investigation of charge-trap memories with AlN based band engineered storage layers Molas G, Colonna JP, Kies R, Belhachemi D, Bocquet M, Gely M, Vidal V, Brianceau P, Martinez E, Papon AM, Licitra C, Vandroux L, Ghibaudo G, De Salvo B Solid-State Electronics, 58(1), 68, 2011 |
| 7 |
Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories Bocquet M, Molas G, Perniola L, Garros X, Buckley J, Gely M, Colonna JP, Grampeix H, Martin F, Vidal V, Toffoli A, Deleonibus S, Ghibaudo G, Pananakakis G, De Salvo B Solid-State Electronics, 53(7), 786, 2009 |
| 8 |
Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories Molas G, Bocquet M, Buckley J, Grampeix H, Gely M, Colonna JP, Licitra C, Rochat N, Veyront T, Garros X, Martin F, Brianceau P, Vidal V, Bongiorno C, Lombardo S, De Salvo B, Deleonibus S Solid-State Electronics, 51(11-12), 1540, 2007 |