검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4 Cheng K, Leys M, Derluyn J, Degroote S, Xiao DP, Lorenz A, Boeykens S, Germain M, Borghs G Journal of Crystal Growth, 298, 822, 2007 |
| 2 |
Effect of V/III ratio in AlN and AlGaN MOVPE Lobanova AV, Mazaev KM, Talalaev RA, Leys M, Boeykens S, Cheng K, Degroote S Journal of Crystal Growth, 287(2), 601, 2006 |
| 3 |
Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC Boeykens S, Leys MR, Germain M, Belmans R, Borghs G Journal of Crystal Growth, 272(1-4), 312, 2004 |