검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges Khazaka R, Bogumilowicz Y, Rouchon D, Boutry H, Chalupa Z, Lapras V, Previtali B, Chevalier N, Papon AM, David S, Maitrejean S Applied Surface Science, 445, 77, 2018 |
| 2 |
Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition Cerba T, Martin M, Moeyaert J, David S, Rouviere JL, Cerutti L, Alcotte R, Rodriguez JB, Bawedin M, Boutry H, Bassani F, Bogumilowicz Y, Gergaud P, Tournie E, Baron T Thin Solid Films, 645, 5, 2018 |
| 3 |
Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In0.53Ga0.47As template Alcotte R, Martin M, Moeyaert J, Gergaud P, David S, Cerba T, Bassani F, Ducroquet F, Bogumilowicz Y, Baron T Thin Solid Films, 645, 119, 2018 |
| 4 |
Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates Bogumilowicz Y, Hartmann JM, Rochat N, Salaun A, Martin M, Bassani F, Baron T, David S, Bao XY, Sanchez E Journal of Crystal Growth, 453, 180, 2016 |
| 5 |
Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers Bogumilowicz Y, Hartmann JM Thin Solid Films, 557, 4, 2014 |
| 6 |
Direct Bonding of Silicon to Platinum Dargent L, Bogumilowicz Y, Renault O, Ghyselen B, Madar R, Clavelier L Journal of the Electrochemical Society, 158(3), H255, 2011 |
| 7 |
High-temperature growth of very high germanium content SiGe virtual substrates Bogumilowicz Y, Hartmann JM, Di Nardo C, Holliger P, Papon AM, Rolland G, Billon T Journal of Crystal Growth, 290(2), 523, 2006 |
| 8 |
Performance and physics of sub-50 nm strained Si on Si1-xGex-on-insulator (SGOI) nMOSFETs Andrieu F, Ernst T, Faynot O, Rozeau O, Bogumilowicz Y, Hartmann JM, Brevard L, Toffoli A, Lafond D, Ghyselen B, Fournel F, Ghibaudo G, Deleonibus S Solid-State Electronics, 50(4), 566, 2006 |
| 9 |
SiGe high-temperature growth kinetics in reduced pressure-chemical vapor deposition Bogumilowicz Y, Hartmann JM, Rolland G, Billon T Journal of Crystal Growth, 274(1-2), 28, 2005 |
| 10 |
Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes Hartmann JM, Damlencourt JF, Bogumilowicz Y, Holliger P, Rolland G, Billon T Journal of Crystal Growth, 274(1-2), 90, 2005 |