화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 From single GaAs detector to sensor for radiation imaging camera
Sagatova A, Zatko B, Necas V, Dubecky F, Anh TL, Sedlackova K, Bohacek P, Zaprazny Z
Applied Surface Science, 461, 3, 2018
2 Comparison of semi-insulating GaAs and 4H-SiC-based semiconductor detectors covered by LiF film for thermal neutron detection
Sedlackova K, Zat'ko B, Sagatova A, Necas V, Bohacek P, Sekacova M
Applied Surface Science, 461, 242, 2018
3 Schottky barrier detectors based on high quality 4H-SiC semiconductor: Electrical and detection properties
Zatko B, Hrubcin L, Sagatova A, Osvald J, Bohacek P, Zaprazny Z, Sedlackova K, Sekacova M, Dubecky F, Skuratov VA, Korytar D, Necas V
Applied Surface Science, 461, 276, 2018
4 A comparative study of Mg and Pt contacts on semi-insulating GaAs: Electrical and XPS characterization
Dubecky F, Kindl D, Hubik P, Micusik M, Dubecky M, Bohacek P, Vanko G, Gombia E, Necas V, Mudron J
Applied Surface Science, 395, 131, 2017
5 Photocurrent spectra of semi-insulating GaAs M-S-M diodes: Role of the contacts
Dubecky F, Oswald J, Kindl D, Hubik P, Dubecky M, Gombia E, Sagatova A, Bohacek P, Sekacova M, Necas V
Solid-State Electronics, 118, 30, 2016
6 The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition
Huran J, Valovic A, Bohacek P, Shvetsov VN, Kobzev AP, Borzakov SB, Kleinova A, Sekacova M, Arbet J, Sasinkova V
Applied Surface Science, 269, 88, 2013
7 Modification of PbWO4 scintillator characteristics by doping
Nikl M, Bohacek P, Mihokova E, Solovieva N, Martini M, Vedda A, Fabeni P, Pazzi GP, Kobayashi M, Ishii M, Usuki Y, Zimmerman D
Journal of Crystal Growth, 229(1), 312, 2001