검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Impact of CBr4, V/III ratio, temperature and AsH3 concentration on MOVPE growth of GaAsSb:C Ostinelli O, Bolognesi CR Journal of Crystal Growth, 311(6), 1508, 2009 |
| 2 |
Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications Lackner D, Pitts OJ, Najmi S, Sandhu P, Kavanagh KL, Yang A, Steger M, Thewalt MLW, Wang Y, McComb DW, Bolognesi CR, Watkins SP Journal of Crystal Growth, 311(14), 3563, 2009 |
| 3 |
Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1-x DHBTs Zeng YP, Ostinelli O, Liu HG, Bolognesi CR Solid-State Electronics, 52(8), 1202, 2008 |
| 4 |
Comparative technology assessment of future InPHBT ultrahigh-speed digital circuits Ruiz-Palmero JM, Hammer U, Jackel H, Liu H, Bolognesi CR Solid-State Electronics, 51(6), 842, 2007 |
| 5 |
Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs Tao NG, Liu HG, Bolognesi CR Solid-State Electronics, 51(6), 995, 2007 |
| 6 |
Optical and electrical characterization of OMVPE-grown AlGaAsSb epitaxial layers on InP substrates Rao TS, So MG, Jiang WY, Mayer T, Roorda S, Gujrathi SC, Thewalt MLW, Bolognesi CR, Watkins SP Journal of Crystal Growth, 287(2), 532, 2006 |
| 7 |
High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100 mm InP substrates using PH3 and AsH3 Liu HG, Wu JQ, Tao N, Firth A, Griswold EM, MacElwee TW, Bolognesi CR Journal of Crystal Growth, 267(3-4), 592, 2004 |
| 8 |
Structural effects of carbon in GaSb grown by metalorganic vapor phase epitaxy Watkins SP, Wiersma RD, Wang CX, Pitts OJ, Bolognesi CR Journal of Crystal Growth, 248, 274, 2003 |
| 9 |
Heavily carbon-doped GaAsSb grown on InP for HBT applications Watkins SP, Pitts OJ, Dale C, Xu XG, Dvorak MW, Matine N, Bolognesi CR Journal of Crystal Growth, 221, 59, 2000 |
| 10 |
Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors Dvorak MW, Matine N, Bolognesi CR, Xu XG, Watkins SP Journal of Vacuum Science & Technology A, 18(2), 761, 2000 |