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| No. | Article |
|---|---|
| 1 |
Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation Kikuchi Y, Hopf T, Mannaert G, Everaert JL, Kubicek S, Eyben P, Waite A, Borniquel JID, Variam N, Mocuta D, Horiguchi N Solid-State Electronics, 152, 58, 2019 |