| 1 |
Microwave plasma oxidation of gallium nitride
Pal S, Mahapatra R, Ray SK, Chakraborty BR, Shivaprasad SM, Lahiri SK, Bose DN
Thin Solid Films, 425(1-2), 20, 2003 |
| 2 |
SIMS characterization of GaAs MIS devices at the interface
Chakraborty BR, Dilawar N, Pal S, Bose DN
Thin Solid Films, 411(2), 240, 2002 |
| 3 |
Study of aluminum and gold as the gate electrode material on silicon nitride based MIS devices
Bose M, Basa DK, Bose DN
Applied Surface Science, 171(1-2), 130, 2001 |
| 4 |
Fabrication and characterization of GaAs MIS devices with N-rich PECVD SixNy dielectric
Pal S, Bose DN
Applied Surface Science, 181(3-4), 179, 2001 |
| 5 |
Electrical conduction studies of plasma enhanced chemical vapor deposited silicon nitride films
Bose M, Basa DK, Bose DN
Journal of Vacuum Science & Technology A, 19(1), 41, 2001 |
| 6 |
Determination of well widths in a MOVPE-grown InGaAs/InP multi-quantum well structure using SIMS and photoluminescence
Bose DN, Banerji P, Bhunia S, Aparna Y, Chhetri MB, Chakraborty BR
Applied Surface Science, 158(1-2), 16, 2000 |
| 7 |
Study of nitrous oxide plasma oxidation of silicon nitride thin films
Bose M, Basa DK, Bose DN
Applied Surface Science, 158(3-4), 275, 2000 |
| 8 |
Effective techniques for reduction of silicon impurity in chloride vapor phase epitaxial growth of GaInAs
Pal R, Dhaul A, Agarwal SK, Pal D, Bose DN
Materials Research Bulletin, 33(2), 261, 1998 |
| 9 |
Double-Crystal X-Ray-Diffraction Studies on Chloride-VPE Grown GaxIn1-xAs Layers with Different Ga-to-in Ratio
Pal R, Agarwal SK, Pal D, Bose DN
Materials Research Bulletin, 32(5), 589, 1997 |
| 10 |
Schottky-Barrier Height Enhancement on N-In0.53Ga0.47As by (NH4)(2)S-X Surface-Treatment
Ali ST, Kumar A, Bose DN
Journal of Materials Science, 30(19), 5031, 1995 |
