검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Regrowth of quantum cascade laser active regions on metamorphic buffer layers Rajeev A, Mawst LJ, Kirch JD, Botez D, Miao J, Buelow P, Kuech TF, Li XQ, Sigler C, Babcock SE, Earles T Journal of Crystal Growth, 452, 268, 2016 |
| 2 |
InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6 mu m-emitting quantum-cascade-laser active regions Mawst LJ, Kirch JD, Chang CC, Kim T, Garrod T, Botez D, Ruder S, Kuech TF, Earles T, Tatavarti R, Pan N, Wibowo A Journal of Crystal Growth, 370, 230, 2013 |
| 3 |
Crystal growth via metal-organic vapor phase epitaxy of quantum-cascade-laser structures composed of multiple alloy compositions Shin JC, Mawst LJ, Botez D Journal of Crystal Growth, 357, 15, 2012 |
| 4 |
Characteristics of mid-IR-emitting deep-well quantum cascade lasers grown by MOCVD Shin JC, D'Souza M, Kirch J, Park JH, Mawst LJ, Botez D Journal of Crystal Growth, 312(8), 1379, 2010 |
| 5 |
InGaAs/GaAsP/AlGaAs, deep-well, quantum-cascade light-emitting structures grown by metalorganic chemical vapor deposition Xu DP, D'Souza M, Shin JC, Mawst LJ, Botez D Journal of Crystal Growth, 310(7-9), 2370, 2008 |
| 6 |
Towards intersubband quantum box lasers: Electron-beam lithography update Tsvid G, D'Souza M, Botez D, Hawkins B, Khandekar A, Kuech T, Zory P Journal of Vacuum Science & Technology B, 22(6), 3214, 2004 |
| 7 |
MOCVD growth of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers for high power applications Lee JJ, Mawst LJ, Botez D Journal of Crystal Growth, 249(1-2), 100, 2003 |