화학공학소재연구정보센터
검색결과 : 24건
No. Article
1 Luminescence mechanisms in Si quantum dots-SiNx nanocomposite structures
Rezgui B, Sibai A, Nychyporuk T, Lemiti M, Bremond G
Journal of Vacuum Science & Technology B, 27(5), 2238, 2009
2 Comparison of scanning capacitance microscopy measurements in open and closed loop modes on highly doped silicon monolayers
Goghero D, Gautier B, Descamps A, Bremond G, Faucher M, Mariolle D, Bertin F
Solid-State Electronics, 50(9-10), 1479, 2006
3 Correlation of optical and photoluminescence properties in amorphous SiNx : H thin films deposited by PECVD or UVCVD
Lelievre JF, De la Torre J, Kaminski A, Bremond G, Lemiti M, El Bouayadi R, Araujo D, Epicier T, Monna R, Pirot M, Ribeyron PJ, Jaussaud C
Thin Solid Films, 511, 103, 2006
4 Using silicon nanostructures for the improvement of silicon solar cells efficiency
De la Torre J, Bremond G, Lemiti M, Guillot G, Mur P, Buffet N
Thin Solid Films, 511, 163, 2006
5 Effect of self-patterned Si1-xGex template layer on the structural and optical properties of Ge dots
Ismail B, Descoins M, Ronda A, Bassani F, Bremond G, Maaref H, Berbezier I
Journal of Vacuum Science & Technology B, 23(1), 242, 2005
6 Ground and first excited states observed in silicon nanocrystals by photocurrent technique
De la Torre J, Souifi A, Poncet A, Bremond G, Guillot G, Garrido B, Morante JR
Solid-State Electronics, 49(7), 1112, 2005
7 Effects of the temperature and of the amount of Ge on the morphology of Ge islands grown by reduced pressure-chemical vapor deposition
Hartmann JM, Bertin F, Rolland G, Semeria MN, Bremond G
Thin Solid Films, 479(1-2), 113, 2005
8 Reduced pressure-chemical vapor deposition of high Ge content Si/SiGe superlattices for 1.3 mu m photo-detection
Masarotto L, Hartmann JM, Bremond G, Rolland G, Papon AM, Semeria MN
Journal of Crystal Growth, 255(1-2), 8, 2003
9 Influence of carrier and doping gases on silicon quantum dots nucleation
Mazen F, Baron T, Hartmann JM, Bremond G, Semeria MN
Journal of Crystal Growth, 255(3-4), 250, 2003
10 Influence of the chemical properties of the substrate on silicon quantum dot nucleation
Mazen F, Baron T, Bremond G, Buffet N, Rochat N, Mur P, Semeria MN
Journal of the Electrochemical Society, 150(3), G203, 2003