검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material Aspects Adelmann C, Swerts J, Richard O, Conard T, Popovici M, Meersschaut J, Afanas'ev VV, Breuil L, Cacciato A, Opsomer K, Brijs B, Tielens H, Pourtois G, Bender H, Jurczak M, Van Houdt J, Van Elshocht S, Kittl JA Journal of the Electrochemical Society, 158(8), H778, 2011 |
| 2 |
Degradation of 248 nm Deep UV Photoresist by Ion Implantation Tsvetanova D, Vos R, Vereecke G, Parac-Vogt TN, Clemente F, Vanstreels K, Radisic D, Conard T, Franquet A, Jivanescu M, Nguyen DAP, Stesmans A, Brijs B, Mertens P, Heyns MM Journal of the Electrochemical Society, 158(8), H785, 2011 |
| 3 |
Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions Vincent B, Loo R, Vandervorst W, Delmotte J, Douhard B, Valev VK, Vanbel M, Verbiest T, Rip J, Brijs B, Conard T, Claypool C, Takeuchi S, Zaima S, Mitard J, De Jaeger B, Dekoster J, Caymax M Solid-State Electronics, 60(1), 116, 2011 |
| 4 |
Atomic Layer Deposition of Strontium Titanate Films Using Sr((Bu3Cp)-Bu-t)(2) and Ti(OMe)(4) Popovici M, Van Elshocht S, Menou N, Swerts J, Pierreux D, Delabie A, Brijs B, Conard T, Opsomer K, Maes JW, Wouters DJ, Kittl JA Journal of the Electrochemical Society, 157(1), G1, 2010 |
| 5 |
High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge Souriau L, Terzieva V, Vandervorst W, Clemente F, Brijs B, Moussa A, Meuris M, Loo R, Caymax M Thin Solid Films, 517(1), 23, 2008 |
| 6 |
Shallow junction ion implantation in Ge and associated defect control Satta A, Simoen E, Janssens T, Clarysse T, De Jaeger B, Benedetti A, Hoflijk I, Brijs B, Meuris M, Vandervorst W Journal of the Electrochemical Society, 153(3), G229, 2006 |
| 7 |
Scaling to sub-1 nm equivalent oxide thickness with hafnium oxide deposited by atomic layer deposition Delabie A, Caymax M, Brijs B, Brunco DP, Conard T, Sleeckx E, Van Elshocht S, Ragnarsson LA, De Gendt S, Heyns MM Journal of the Electrochemical Society, 153(8), F180, 2006 |
| 8 |
Metallorganic chemical vapor deposition of dysprosium scandate high-k layers using mmp-type precursors Van Elshocht S, Lehnen P, Seitzinger B, Abrutis A, Adelmann C, Brijs B, Caymax M, Conard T, De Gendt S, Franquet A, Lohe C, Lukosius M, Moussa A, Richard O, Williams P, Witters T, Zimmerman P, Heyns M Journal of the Electrochemical Society, 153(9), F219, 2006 |
| 9 |
N-2 as carrier gas: an alternative to H-2 for enhanced epitaxy of Si, SiGe and SiGe : C Meunier-Beillard P, Caymax M, Van Nieuwenhuysen K, Doumen G, Brijs B, Hopstaken M, Geenen L, Vandervorst W Applied Surface Science, 224(1-4), 31, 2004 |
| 10 |
Errors in near-surface and interfacial profiling of boron and arsenic Vandervorst W, Janssens T, Brijs B, Conard T, Huyghebaert C, Fruhauf J, Bergmaier A, Dollinger G, Buyuklimanli T, VandenBerg JA, Kimura K Applied Surface Science, 231-2, 618, 2004 |