검색결과 : 2건
No. | Article |
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1 |
On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers Koleske DD, Fischer AJ, Bryant BN, Kotula PG, Wierer JJ Journal of Crystal Growth, 415, 57, 2015 |
2 |
Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy Bryant BN, Hirai A, Young EC, Nakamura S, Speck JS Journal of Crystal Growth, 369, 14, 2013 |