화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers
Koleske DD, Fischer AJ, Bryant BN, Kotula PG, Wierer JJ
Journal of Crystal Growth, 415, 57, 2015
2 Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy
Bryant BN, Hirai A, Young EC, Nakamura S, Speck JS
Journal of Crystal Growth, 369, 14, 2013