검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters von den Driesch N, Stange D, Rainko D, Breuer U, Capellini G, Hartmann JM, Sigg H, Mantl S, Grutzmacher D, Buca D Solid-State Electronics, 155, 139, 2019 |
| 2 |
Process modules for GeSn nanoelectronics with high Sn-contents Schulte-Braucks C, Glass S, Hofmann E, Stange D, von den Driesch N, Hartmann JM, Ikonic Z, Zhao QT, Buca D, Mantl S Solid-State Electronics, 128, 54, 2017 |
| 3 |
Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3% Luong GV, Knoll L, Blaeser S, Suess MJ, Sigg H, Schafer A, Trellenkamp S, Bourdelle KK, Buca D, Zhao QT, Mantl S Solid-State Electronics, 108, 19, 2015 |
| 4 |
Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics Knoll L, Richter S, Nichau A, Trellenkamp S, Schafer A, Wirths S, Blaeser S, Buca D, Bourdelle KK, Zhao QT, Mantl S Solid-State Electronics, 98, 32, 2014 |
| 5 |
SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications Wirths S, Buca D, Ikonic Z, Harrison P, Tiedemann AT, Hollander B, Stoica T, Mussler G, Breuer U, Hartmann JM, Grutzmacher D, Mantl S Thin Solid Films, 557, 183, 2014 |
| 6 |
Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn Oehme M, Buca D, Kostecki K, Wirths S, Hollander B, Kasper E, Schulze J Journal of Crystal Growth, 384, 71, 2013 |
| 7 |
Low temperature RPCVD epitaxial growth of Si1-xGex using Si2H6 and Ge2H6 Wirths S, Buca D, Tiedemann AT, Bernardy P, Hollander B, Stoica T, Mussler G, Breuer U, Mantl S Solid-State Electronics, 83, 2, 2013 |
| 8 |
p-Type Ion Implantation in Tensile Si/Compressive Si0.5Ge0.5/Tensile Strained Si Heterostructures Minamisawa RA, Buca D, Hollander B, Hartmann JM, Bourdelle KK, Mantl S Journal of the Electrochemical Society, 159(1), H44, 2012 |
| 9 |
LaLuO3 higher-kappa dielectric integration in SOI MOSFETs with a gate-first process Nichau A, Ozben ED, Schnee M, Lopes JMJ, Besmehn A, Luysberg M, Knoll L, Habicht S, Mussmann V, Luptak R, Lenk S, Rubio-Zuazo J, Castro GR, Buca D, Zhao QT, Schubert J, Mantl S Solid-State Electronics, 71, 19, 2012 |
| 10 |
Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors Schmidt M, Minamisawa RA, Richter S, Luptak R, Hartmann JM, Buca D, Zhao QT, Mantl S Solid-State Electronics, 71, 42, 2012 |