화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Utilization of TXRF analytical technique in order to improve front-end semiconductor processing
Budri T
Applied Surface Science, 254(15), 4768, 2008
2 Front- and back-end process characterization by SIMS to achieve electrically matched devices
Budri T, Kouzminov D
Applied Surface Science, 231-2, 772, 2004
3 Suppressing baron penetration and cobalt silicide agglomeration in deep submicron p-channel metal-oxide-semiconductor devices
Kamal AHM, Obeidat AT, Budri T
Journal of Vacuum Science & Technology B, 20(1), 173, 2002