검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack Lim TC, Rozeau O, Buj C, Paccaud M, Lepilliet S, Dambrine G, Danneville F Solid-State Electronics, 53(4), 433, 2009 |
| 2 |
FDSOI devices with thin BOX and ground plane integration for 32 nm node and below Fenouillet-Beranger C, Denorme S, Perreau P, Buj C, Faynot O, Andrieu F, Tosti L, Barnola S, Salvetat T, Garros X, Casse M, Allain F, Loubet N, Pham-Nguyen L, Deloffre E, Gros-Jean M, Beneyton R, Laviron C, Marin M, Leyris C, Haendler S, Leverd F, Gouraud P, Scheiblin P, Clement L, Pantel R, Deleonibus S, Skotnicki T Solid-State Electronics, 53(7), 730, 2009 |