검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers Mukherjee K, Beaton DA, Mascarenhas A, Bulsara MT, Fitzgerald EA Journal of Crystal Growth, 392, 74, 2014 |
| 2 |
Fabrication of GaAs-on-Insulator via Low Temperature Wafer Bonding and Sacrificial Etching of Ge by XeF2 Bai Y, Cole GD, Bulsara MT, Fitzgerald EA Journal of the Electrochemical Society, 159(2), H183, 2012 |
| 3 |
Coherent Phonon Heat Conduction in Superlattices Luckyanova MN, Garg J, Esfarjani K, Jandl A, Bulsara MT, Schmidt AJ, Minnich AJ, Chen S, Dresselhaus MS, Ren ZF, Fitzgerald EA, Chen G Science, 338(6109), 936, 2012 |
| 4 |
Compositionally-graded InGaAs-InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Yang L, Bulsara MT, Lee KE, Fitzgerald EA Journal of Crystal Growth, 324(1), 103, 2011 |
| 5 |
Monolithic integration of InP-based transistors on Si substrates using MBE Liu WK, Lubyshev D, Fastenau JM, Wu Y, Bulsara MT, Fitzgerald EA, Urteaga M, Ha W, Bergman J, Brar B, Hoke WE, LaRoche JR, Herrick KJ, Kazior TE, Clark D, Smith D, Thompson RF, Drazek C, Daval N Journal of Crystal Growth, 311(7), 1979, 2009 |
| 6 |
Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates Lubyshev D, Fastenau JM, Wu Y, Liu WK, Bulsara MT, Fitzgerald EA, Hoke WE Journal of Vacuum Science & Technology B, 26(3), 1115, 2008 |
| 7 |
Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient Bera LK, Mathew S, Balasubramanian N, Braithwaite G, Currie MT, Singaporewala F, Yap J, Hammond R, Lochtefeld A, Bulsara MT, Fitzgerald EA Applied Surface Science, 224(1-4), 278, 2004 |
| 8 |
Strained Si on insulator technology: from materials to devices Langdo TA, Currie MT, Cheng ZY, Fiorenza JG, Erdtmann M, Braithwaite G, Leitz CW, Vineis C, Carlin JA, Lochtefeld A, Bulsara MT, Lauer I, Antoniadis DA, Somerville M Solid-State Electronics, 48(8), 1357, 2004 |