검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate Mahapatra R, Chakraborty AK, Poolamai N, Horsfall A, Chattopadhyay S, Wright NG, Coleman KS, Coleman PG, Burrows CP Journal of Vacuum Science & Technology B, 25(1), 217, 2007 |
| 2 |
Real-time full spectrum fitting of beam-based Doppler broadening data Coleman PG, Burrows CP, Mason RE Applied Surface Science, 252(9), 3183, 2006 |
| 3 |
Optimization of measurement parameters in Doppler broadening spectroscopy Pi XD, Burrows CP, Coleman PG Applied Surface Science, 194(1-4), 255, 2002 |
| 4 |
Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si Gwilliam RM, Knights AP, Burrows CP, Coleman PG Journal of Vacuum Science & Technology B, 20(1), 427, 2002 |
| 5 |
Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor Ortolland S, Wright NG, Johnson CM, Knights AP, Coleman PG, Burrows CP, Pidduck AJ Materials Science Forum, 353-356, 567, 2001 |