화학공학소재연구정보센터
검색결과 : 21건
No. Article
1 Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates
Terziyska PT, Butcher KSA, Rafailov P, Alexandrov D
Applied Surface Science, 353, 103, 2015
2 GaN-InGaN LED efficiency reduction from parasitic electron currents in p-GaN
Togtema G, Georgiev V, Georgieva D, Gergova R, Butcher KSA, Alexandrov D
Solid-State Electronics, 103, 44, 2015
3 Investigation of the presence of metal droplets after pulsed InN and GaN epitaxial growth using atomic force microscopy and nanoindentation
Terziyska PT, Butcher KSA, Alexandrov D
Applied Surface Science, 258(24), 9997, 2012
4 Effects of crystallinity and chemical variation on apparent band-gap shift in polycrystalline indium nitride
Chen PPT, Downes JE, Fernandes AJ, Butcher KSA, Wintrebert-Fouquet M, Wuhrer R, Phillips MR
Thin Solid Films, 519(6), 1831, 2011
5 Piezoelectric coefficient of InN films prepared by radio-frequency sputtering
Wintrebert-Fouquet A, Butcher KSA, Guy IL, Zheng Z
Thin Solid Films, 516(21), 7267, 2008
6 Proceedings of the second ONR - International Indium Nitride Workshop -9-13 January 2005 - Kailua-Kona, Hawaii - Preface
Butcher KSA
Journal of Crystal Growth, 288(2), 217, 2006
7 Compositional and structural characterization of indium nitride using swift ions
Timmers H, Butcher KSA, Shrestha SK, Chen PPT, Wintrebert-Fouquet M, Dogra R
Journal of Crystal Growth, 288(2), 236, 2006
8 Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD
Chen PPT, Butcher KSA, Wintrebert-Fouquet M, Wuhrer R, Phillips MR, Prince KE, Timmers H, Shrestha SK, Usher BF
Journal of Crystal Growth, 288(2), 241, 2006
9 Energy band gap and optical properties of non-stoichiometric InN -theory and experiment
Alexandrov D, Butcher KSA, Tansley TL
Journal of Crystal Growth, 288(2), 261, 2006
10 High energy Urbach characteristic observed for gallium nitride amorphous surface oxide
Chen PPT, Butcher KSA, Goldys EM, Tansley TL, Prince KE
Thin Solid Films, 496(2), 342, 2006