검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory Lee S, Song J, Lim S, Chekol SA, Hwang H Solid-State Electronics, 153, 8, 2019 |
| 2 |
Forming mechanism of Te-based conductive-bridge memories Mendes MK, Martinez E, Marty A, Veillerot M, Yamashita Y, Gassilloud R, Bernard M, Renault O, Barrett N Applied Surface Science, 432, 34, 2018 |
| 3 |
Investigation of resistive switching in PVP and ultra-thin hybrid RRAM Varun I, Bharti D, Mahato AK, Raghuwanshi V, Tiwari SP Solid State Ionics, 325, 196, 2018 |
| 4 |
Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10 mu A) Belmonte A, Fantini A, Redolfi A, Houssa M, Jurczak M, Goux L Solid-State Electronics, 125, 189, 2016 |
| 5 |
Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments Jeon H, Park J, Jang W, Kim H, Song H, Kim H, Seo H, Jeon H Current Applied Physics, 15(9), 1005, 2015 |
| 6 |
Impact of Sb doping on power consumption and retention reliability of GeS2 based conductive bridge random access memory Guy J, Molas G, Vianello E, Carabasse C, Blaise P, Bernard M, Souchier E, Francois P, Aussenac F, Delaye V, Clermidy F, De Salvo B Thin Solid Films, 563, 15, 2014 |
| 7 |
On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories Longnos F, Vianello E, Cagli C, Molas G, Souchier E, Blaise P, Carabasse C, Rodriguez G, Jousseaume V, De Salvo B, Dahmani F, Verrier P, Bretegnier D, Liebault J Solid-State Electronics, 84, 155, 2013 |
| 8 |
Thermal-stability optimization of Al2O3/Cu-Te based conductive-bridging random access memory systems Goux L, Opsomer K, Franquet A, Kar G, Jossart N, Richard O, Wouters DJ, Muller R, Detavernier C, Jurczak M, Kittl JA Thin Solid Films, 533, 29, 2013 |
| 9 |
Challenges and opportunities for future non-volatile memory technology Nishi Y Current Applied Physics, 11(2), E101, 2011 |
| 10 |
Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process Gopalan C, Ma Y, Gallo T, Wang J, Runnion E, Saenz J, Koushan F, Blanchard P, Hollmer S Solid-State Electronics, 58(1), 54, 2011 |