화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Absolute densities and kinetics of H atoms and CFx radicals in low-pressure, high-density CHF3 plasmas
Sasaki K, Okamoto M
Thin Solid Films, 506, 705, 2006
2 Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism
Schaepkens M, Standaert TEFM, Rueger NR, Sebel PGM, Oehrlein GS, Cook JM
Journal of Vacuum Science & Technology A, 17(1), 26, 1999