| 1 |
CoSi2 ultra-thin layer formation kinetics and texture from X-ray diffraction
Delattre R, Simola R, Rivero C, Serradeil V, Perrin-Pellegrino C, Thomas O
Thin Solid Films, 541, 17, 2013 |
| 2 |
Enhanced formation and morphological stability of low-resistivity CoSi2 nanodot arrays on epitaxial Si0.7Ge0.3 virtual substrate
Cheng SL, Yang CY, Lee SW, Hsu HF, Chen H
Materials Chemistry and Physics, 130(1-2), 609, 2011 |
| 3 |
Two routes to polycrystalline CoSi2 thin films by co-sputtering Co and Si
Tsuji Y, Tsuji Y, Nakamura S, Noda S
Applied Surface Science, 256(23), 7118, 2010 |
| 4 |
Molecular beam epitaxy of semiconductor (BaSi2)metal (CoSi2) hybrid structures on Si(111) substrates for photovoltaic application
Ichikawa Y, Kobayashi M, Sasase M, Suemasu T
Applied Surface Science, 254(23), 7963, 2008 |
| 5 |
Titanium Interlayer Mediated Epitaxy of CoSi2 on Si1-xGex
Burnette JE, Kiesel S, Sayers DE, Nemanich RJ
Thin Solid Films, 516(8), 1809, 2008 |
| 6 |
Metal nanocrystals as charge storage nodes for nonvolatile memory devices
Yeh PH, Chen LJ, Liu PT, Wang DY, Chang TC
Electrochimica Acta, 52(8), 2920, 2007 |
| 7 |
Structure transition of single-texture CoSi2 nanolayer grown by refractory-interlayer-mediated epitaxy method
Akhavan O, Moshfegh AZ
Applied Surface Science, 253(5), 2953, 2006 |
| 8 |
Effect of Ni interlayer on stress level of COSi2 films in Co/Ni/Si(100) bi-layered system
Ma K, Feng JY
Applied Surface Science, 252(5), 1679, 2005 |
| 9 |
Single-crystalline growth of COSi2 by refractory-interlayer-mediated epitaxy
Akhavan O, Moshfegh AZ, Hashemifar SJ, Azimirad R
Applied Surface Science, 233(1-4), 123, 2004 |
| 10 |
Structural and electrical characteristics of epitaxial CoSi2 grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer
Shin DO, Ban SH, Ahn YS, Lee YS, Lee NE, Shim KH
Thin Solid Films, 458(1-2), 269, 2004 |
