검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu(In,Ga)Se-2 and a-Si : H cases Mencaraglia D, Saad SO, Djebbour Z Thin Solid Films, 431-432, 135, 2003 |
| 2 |
The mechanism of hydrogen gas evolution on GaAs cathodes elucidated by in situ infrared spectroscopy Erne BH, Ozanam F, Chazalviel JN Journal of Physical Chemistry B, 103(15), 2948, 1999 |
| 3 |
Silicon etching during the HFCVD diamond growth Arnault JC, Hubert S, Le Normand F Journal of Physical Chemistry B, 102(25), 4856, 1998 |
| 4 |
Hydrogen in silicon : Fundamental properties and consequences for devices Van de Walle CG Journal of Vacuum Science & Technology A, 16(3), 1767, 1998 |
| 5 |
The Influence of the Inductively-Coupled Hydrogen Plasma on the GaAs Surface-Properties Pincik E, Jergel M, Kucera M, Brunel M Thin Solid Films, 299(1-2), 136, 1997 |