화학공학소재연구정보센터
검색결과 : 36건
No. Article
1 Impact of copper on light-induced degradation in Czochralski silicon PERC solar cells
Modanese C, Wagner M, Wolny F, Oehlke A, Laine HS, Inglese A, Vahlman H, Yli-Koski M, Savin H
Solar Energy Materials and Solar Cells, 186, 373, 2018
2 Recent insights into boron-oxygen related degradation: Evidence of a single defect
Hallam B, Kim M, Abbott M, Nampalli N, Naerland T, Stefani B, Wenham S
Solar Energy Materials and Solar Cells, 173, 25, 2017
3 On the equilibrium concentration of boron-oxygen defects in crystalline silicon
Walter DC, Falster R, Voronkov VV, Schmidt J
Solar Energy Materials and Solar Cells, 173, 33, 2017
4 Investigations on accelerated processes for the boron-oxygen defect in p-type Czochralski silicon
Hamer P, Hallam B, Abbott M, Chan C, Nampalli N, Wenham S
Solar Energy Materials and Solar Cells, 145, 440, 2016
5 Effect of dopant compensation on the performance of Czochralski silicon solar cells
Xiao CQ, Yang DR, Yu XG, Wang P, Chen P, Que DL
Solar Energy Materials and Solar Cells, 101, 102, 2012
6 Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon
Wang B, Zhang XP, Ma XY, Yang DR
Journal of Crystal Growth, 318(1), 183, 2011
7 Immobilization of dislocations by oxygen precipitates in Czochralski silicon: Feasibility of precipitation strengthening mechanism
Zeng ZD, Chen JH, Zeng YH, Ma XG, Yang DR
Journal of Crystal Growth, 324(1), 93, 2011
8 Germanium-doped Czochralski silicon for photovoltaic applications
Wang P, Yu XG, Chen P, Li XQ, Yang DR, Chen X, Huang ZF
Solar Energy Materials and Solar Cells, 95(8), 2466, 2011
9 Effect of oxygen precipitation on the performance of Czochralski silicon solar cells
Chen L, Yu XG, Chen P, Wang P, Gu X, Lu JG, Yang DR
Solar Energy Materials and Solar Cells, 95(11), 3148, 2011
10 Effect of oxygen precipitates on dislocation motion in Czochralski silicon
Zeng ZD, Ma XY, Chen JH, Yang DR, Ratschinski I, Hevroth F, Leipner HS
Journal of Crystal Growth, 312(2), 169, 2010