| 1 |
A Systematic Study of the Interactions in the Top Electrode/Capping Layer/Thin Film Encapsulation of Transparent OLEDs
Kwon BH, Lee HK, Kim MH, Joo CW, Cho HS, Lim JT, Jung YS
Journal of Industrial and Engineering Chemistry, 93, 237, 2021 |
| 2 |
Interspace modification of titania-nanorod arrays for efficient mesoscopic perovskite solar cells
Chen P, Jin ZX, Wang YL, Wang MQ, Chen SX, Zhang Y, Wang LL, Zhang XT, Liu YC
Applied Surface Science, 402, 86, 2017 |
| 3 |
Defect annihilation-mediated enhanced activation energy of GaAs0.979N0.021-capped InAs/GaAs quantum dots by H- ion implantation
Biswas M, Singh S, Balgarkashi A, Makkar RL, Bhatnagar A, Subrahmanyam NBV, Gupta SK, Bhagwat P, Chakrabarti S
Thin Solid Films, 639, 73, 2017 |
| 4 |
A detailed look beneath the surface: Evidence of a surface reconstruction beneath a capping layer
Krull D, Tesch MF, Schonbohm F, Luhr T, Keutner C, Berges U, Mertins HC, Westphal C
Applied Surface Science, 367, 391, 2016 |
| 5 |
Tuning Eu3+ emission in europium sesquioxide films by changing the crystalline phase
Mariscal A, Quesada A, Camps I, Palomares FJ, Fernandez JF, Serna R
Applied Surface Science, 374, 71, 2016 |
| 6 |
A modified sequential deposition method for fabrication of perovskite solar cells
Li HQ, Li SB, Wang YF, Sarvari H, Zhang P, Wang MJ, Chen Z
Solar Energy, 126, 243, 2016 |
| 7 |
Effective and reproducible method for preparing low defects perovskite film toward highly photoelectric properties with large fill factor by shaping capping layer
Ye JJ, Zhu LZ, Zhou L, Liu XP, Zhang XH, Zheng HY, Liu GZ, Shao ZP, Pan X, Dai SY
Solar Energy, 136, 505, 2016 |
| 8 |
Investigating gate metal induced reduction of surface donor density in GaN/AlGaN/GaN heterostructure by electroreflectance spectroscopy
Shin JH, Kim KC, Kim KS
Current Applied Physics, 15(11), 1478, 2015 |
| 9 |
Evidence of change in crystallization behavior of thin HfO2 on Si: Effects of self-formed SiO2 capping layer
Shih CF, Hsiao CY, Hsiao YC, Chen BC, Leu CC
Thin Solid Films, 556, 291, 2014 |
| 10 |
Influence of the GaN capping thickness on the strain and photoluminescence properties of InN/GaN quantum dots
Ke WC, Wu YH, Houng WC, Wei CA
Thin Solid Films, 529, 111, 2013 |
