검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates Alexewicz A, Ostermaier C, Henkel C, Bethge O, Carlin JF, Lugani L, Grandjean N, Bertagnolli E, Pogany D, Strasser G Thin Solid Films, 520(19), 6230, 2012 |
| 2 |
Sputtering of (001) AlN thin films: Control of polarity by a seed layer Milyutin E, Harada S, Martin D, Carlin JF, Grandjean N, Savu V, Vaszquez-Mena O, Brugger J, Muralt P Journal of Vacuum Science & Technology B, 28(6), L61, 2010 |
| 3 |
InAIN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases Cico K, Kuzmik J, Liday J, Husekova K, Pozzovivo G, Carlin JF, Grandjean N, Pogany D, Vogrincic P, Frohlich K Journal of Vacuum Science & Technology B, 27(1), 218, 2009 |
| 4 |
Strain relaxation of AlN epilayers Stranski-Krastanov GaN/AlN quantum dots grown by organic vapor phase epitaxy Simeonov D, Feltin E, Demangeot K, Pinquier C, Carlin JF, Butte R, Frandon J, Grandjean N Journal of Crystal Growth, 299(2), 254, 2007 |