화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Understanding the growth of p-doped 4H-SiC layers using vapour-liquid-solid transport
Vo-Ha A, Carole D, Lazar M, Tournier D, Cauwet F, Souliere V, Thierry-Jebali N, Brosselard P, Planson D, Brylinski C, Ferro G
Thin Solid Films, 548, 125, 2013
2 Growth of silicon oxide nanowires at low temperature using tin hydroxide catalyst
Carole D, Brioude A, Pillonnet A, Lorenzzi J, Kim-Hak O, Cauwet F, Ferro G
Journal of Crystal Growth, 320(1), 55, 2011
3 Growing 3C-SiC heteroepitaxial layers on alpha-SiC substrate by vapour-liquid-solid mechanism from the Al-Ge-Si ternary system
Lorenzzi J, Ferro G, Cauwet F, Souliere V, Carole D
Journal of Crystal Growth, 318(1), 397, 2011
4 Incorporation of group III, IV and V elements in 3C-SiC(111) layers grown by the vapour-liquid-solid mechanism
Lorenzzi J, Zoulis G, Marinova M, Kim-Hak O, Sun JW, Jegenyes N, Peyre H, Cauwet F, Chaudouet P, Soueidan M, Carole D, Camassel J, Polychroniadis EK, Ferro G
Journal of Crystal Growth, 312(23), 3443, 2010
5 Evolution of 3C-SiC islands nucleated from a liquid phase on Si face alpha-SiC substrates
Kim-Hak O, Ferro G, Lorenzzi J, Carole D, Dazord J, Chaudouet P, Chaussende D, Miele P
Thin Solid Films, 518(15), 4234, 2010