화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics
Bomers M, Mezy A, Cerutti L, Barho F, Flores FGP, Tournie E, Taliercio T
Applied Surface Science, 451, 241, 2018
2 In situ determination of the growth conditions of GaSbBi alloys
Delorme O, Cerutti L, Tournie E, Rodriguez JB
Journal of Crystal Growth, 495, 9, 2018
3 Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition
Cerba T, Martin M, Moeyaert J, David S, Rouviere JL, Cerutti L, Alcotte R, Rodriguez JB, Bawedin M, Boutry H, Bassani F, Bogumilowicz Y, Gergaud P, Tournie E, Baron T
Thin Solid Films, 645, 5, 2018
4 Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer
Rodriguez JB, Cerutti L, Patriarche G, Largeau L, Madiomanana K, Tournie E
Journal of Crystal Growth, 477, 65, 2017
5 Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys
Delorme O, Cerutti L, Tournie E, Rodriguez JB
Journal of Crystal Growth, 477, 144, 2017
6 Editor's preface
Cerutti L, Lemaitre A, Rodriguez JB
Journal of Crystal Growth, 477, 1, 2017
7 X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates
Rodriguez JB, Madiomanana K, Cerutti L, Castellano A, Tournie E
Journal of Crystal Growth, 439, 33, 2016
8 Silicon surface preparation for III-V molecular beam epitaxy
Madiomanana K, Bahri M, Rodriguez JB, Largeau L, Cerutti L, Mauguin O, Castellano A, Patriarche G, Tournie E
Journal of Crystal Growth, 413, 17, 2015
9 MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones
Gassenq A, Cerutti L, Baranov AN, Tournie E
Journal of Crystal Growth, 311(7), 1905, 2009
10 GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 mu m) grown by MBE
Cerutti L, Ducanchez A, Narcy G, Grech P, Boissier G, Garnache A, Tournie E, Genty F
Journal of Crystal Growth, 311(7), 1912, 2009