| 1 |
The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes
Fiat S, Polat I, Bacaksiz E, Kompitsas M, Cankaya G
Current Applied Physics, 13(6), 1112, 2013 |
| 2 |
Formation mechanisms of Cu(In,Ga)Se-2 solar cells prepared from electrodeposited precursors
Oliva F, Broussillou C, Annibaliano M, Frederich N, Grand PP, Roussy A, Collot P, Bodnar S
Thin Solid Films, 535, 127, 2013 |
| 3 |
The influence of stoichiometry and annealing temperature on the properties of CuIn0.7Ga0.3Se2 and CuIn0.7Ga0.3Te2 thin films
Fiat S, Koralli P, Bacaksiz E, Giannakopoulos KP, Kompitsas M, Manolakos DE, Cankaya G
Thin Solid Films, 545, 64, 2013 |
| 4 |
Deposition and characterization of layer-by-layer sputtered AgGaSe2 thin films
Karaagac H, Parlak M
Applied Surface Science, 257(13), 5731, 2011 |
| 5 |
Effects of annealing on structural and morphological properties of e-beam evaporated AgGaSe2 thin films
Karaagac H, Parlak M
Applied Surface Science, 255(11), 5999, 2009 |
| 6 |
Pentanary chalcopyrite compounds without tetragonal deformation in the heptanary system Cu(Al,Ga,In)(S,Se,Te)(2)
Hergert F, Hock R, Schorr S
Solar Energy Materials and Solar Cells, 91(1), 44, 2007 |
| 7 |
Green to ultraviolet photoluminescence from CuAlxGa1-xS2 chalcopyrite semiconductor heteroepitaxial alloys grown by low-pressure metalorganic vapor phase epitaxy
Harada Y, Nakanishi H, Chichibu SF
Journal of Crystal Growth, 226(4), 473, 2001 |
