화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Physics-based 1/f noise model for MOSFETs with nitrided high-kappa gate dielectrics
Morshed TH, Devireddy SP, Celik-Butler Z, Shanware A, Green K, ChamberS JJ, Visokay MR, Colombo L
Solid-State Electronics, 52(5), 711, 2008
2 Photochemically knocking out glutamate receptors in vivo
Chambers JJ, Gouda H, Young DM, Kuntz ID, England PM
Journal of the American Chemical Society, 126(43), 13886, 2004
3 Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon
Chambers JJ, Busch BW, Schulte WH, Gustafsson T, Garfunkel E, Wang S, Maher DM, Klein TM, Parsons GN
Applied Surface Science, 181(1-2), 78, 2001
4 Endpoint uniformity sensing and analysis in silicon dioxide plasma etching using in situ mass spectrometry
Chambers JJ, Min K, Parsons GN
Journal of Vacuum Science & Technology B, 16(6), 2996, 1998