검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
4H-SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth Balachandran A, Song HZ, Sudarshan TS, Chandrashekhar MVS Journal of Crystal Growth, 448, 97, 2016 |
| 2 |
Metal Catalyzed Electrochemical Synthesis of Hydrocarbons from Epitaxial Graphene Daniels KM, Obe A, Daas BK, Weidner J, Williams C, Sudarshan TS, Chandrashekhar MVS Journal of the Electrochemical Society, 163(5), E130, 2016 |
| 3 |
Mechanism of Electrochemical Hydrogenation of Epitaxial Graphene Daniels KM, Shetu S, Staser J, Weidner J, Williams C, Sudarshan TS, Chandrashekhar MVS Journal of the Electrochemical Society, 162(4), E37, 2015 |
| 4 |
Vapor phase surface preparation (etching) of 4H-SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy Rana T, Chandrashekhar MVS, Sudarshan TS Journal of Crystal Growth, 380, 61, 2013 |
| 5 |
Gallium nitride powders: Mechanism of ammonothermal synthesis, ball-mill assisted rare earth doping and uniform electrophoretic deposition Thomas T, Guo XM, Shi JX, Lepak LA, Chandrashekhar MVS, Li KW, DiSalvo FJ, Spencer MG Journal of Crystal Growth, 316(1), 90, 2011 |
| 6 |
Purification and mechanical nanosizing of Eu-doped GaN Thomas T, Guo XM, Chandrashekhar MVS, Poitras CB, Shaff W, Dreibelbis M, Reiherzer J, Li KW, DiSalvo FJ, Lipson M, Spencer MG Journal of Crystal Growth, 311(19), 4402, 2009 |
| 7 |
Effect of growth temperature on Eu incorporation in GaN powders Shi JX, Chandrashekhar MVS, Relherzer J, Schaff WJ, Lu J, Disalvo FJ, Spencer MG Journal of Crystal Growth, 310(2), 452, 2008 |