화학공학소재연구정보센터
검색결과 : 32건
No. Article
1 Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
Anandan D, Kakkerla RK, Yu HW, Ko HL, Nagarajan V, Singh SK, Lee CT, Chang EY
Journal of Crystal Growth, 506, 45, 2019
2 Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio
Anandan D, Nagarajan V, Kakkerla RK, Yu HW, Ko HL, Singh SK, Lee CT, Chang EY
Journal of Crystal Growth, 522, 30, 2019
3 Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications
Yao JN, Lin YC, Lin MS, Huang TJ, Hsu HT, Sze SM, Chang EY
Solid-State Electronics, 157, 55, 2019
4 The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor deposition
Ha MTH, Huynh SH, Do HB, Lee CT, Luc QH, Chang EY
Thin Solid Films, 669, 430, 2019
5 Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD
Kakkerla RK, Anandan D, Hsiao CJ, Yu HW, Singh SK, Chang EY
Journal of Crystal Growth, 490, 19, 2018
6 Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD
Lumbantoruan F, Zheng XX, Huang JH, Huang RY, Mangasa F, Chang EY, Tu YY, Lee CT
Journal of Crystal Growth, 501, 7, 2018
7 Effect of surface passivation by a low pressure and temperature environment-grown thermal oxide layer for multi-crystalline silicon solar cells
Liao SS, Chuang CL, Lin YC, Dee CF, Majlis BY, Chang EY
Thin Solid Films, 660, 1, 2018
8 Reliability improvement in GaN HEMT power device using a field plate approach
Wu WH, Lin YC, Chin PC, Hsu CC, Lee JH, Liu SC, Maa JS, Iwai H, Chang EY, Hsu HT
Solid-State Electronics, 133, 64, 2017
9 Monolithic 3D CMOS Using Layered Semiconductors
Sachid AB, Tosun M, Desai SB, Hsu CY, Lien DH, Madhvapathy SR, Chen YZ, Hettick M, Kang JS, Zeng YP, He JH, Chang EY, Chueh YL, Javey A, Hu CM
Advanced Materials, 28(13), 2547, 2016
10 The reliability study of III-V solar cell with copper based contacts
Hsu CH, Chang EY, Chang HJ, Maa JS, Pande K
Solid-State Electronics, 114, 174, 2015