| 1 |
Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors
Jian LY, Lee HY, Lin YH, Lee CT
Solid-State Electronics, 145, 54, 2018 |
| 2 |
Enhancement of the electrical characteristics of indium-zinctin-oxide thin-film transistors utilizing dual-channel layers
Oh D, Ahn JS, Cho WJ, Kim TW
Current Applied Physics, 14(7), 932, 2014 |
| 3 |
Effects of film thickness and Sn concentration on electrical properties of solution-processed zinc tin oxide thin film transistors
Kim CG, Lee NH, Kwon YK, Kang BK
Thin Solid Films, 544, 129, 2013 |
| 4 |
Mechanisms of ZnO buffer layer in bottom gate ZnO:Al transparent thin film transistors
Lin YH, Lee HY, Lee CT, Chou CH
Materials Chemistry and Physics, 134(2-3), 1203, 2012 |
| 5 |
Characteristics of Facing Target-Sputtered Amorphous InGaZnO Thin Films as the Active Channel Layer in Transparent Thin Film Transistor on Polymeric Substrate
Shin HJ, Han DC, Choi YC, Lee DK
Molecular Crystals and Liquid Crystals, 550, 13, 2011 |
| 6 |
Formation of polycrystalline thin-film transistors with stacked poly-SiGe/poly-Si channel layer for low-voltage applications
Juang MH, Chang CW, Peng YS, Hwang CC, Wang JL, Shye DC
Thin Solid Films, 519(10), 3393, 2011 |
| 7 |
Thin-film transistors with sol-gel deposited Mg0.1Zn0.9O films as active channel layer
Wang FJ, Huang YF, Li W, Xue MS, Ou JF
Thin Solid Films, 520(1), 519, 2011 |
| 8 |
Formation of sub-micrometer polycrystalline-SiGe thin-film transistors by using a thinned channel layer
Juang MH, Chang CW, Huang CW, Wang JL, Shye DC, Hwang CC, Jang SL
Solid-State Electronics, 54(3), 303, 2010 |
| 9 |
Dual-channel 4H-SiC metal semiconductor field effect transistors
Zhu CL, Rusli, Zhao P
Solid-State Electronics, 51(3), 343, 2007 |
