화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Comprehensive understanding of charge lateral migration in 3D SONOS memories
Liu LF, Arreghini A, Van den Bosch G, Pan LY, Van Houdt J
Solid-State Electronics, 116, 95, 2016
2 The effect of oxygen source on atomic layer deposited Al2O3 as blocking oxide in metal/aluminum oxide/nitride/oxide/silicon memory capacitors
Nikolaou N, Ioannou-Sougleridis V, Dimitrakis P, Normand P, Skarlatos D, Giannakopoulos K, Kukli K, Niinisto J, Ritala M, Leskela M
Thin Solid Films, 533, 5, 2013
3 Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory
Congedo G, Wiemer C, Lamperti A, Cianci E, Molle A, Volpe FG, Spiga S
Thin Solid Films, 533, 9, 2013
4 Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories
Bocquet M, Molas G, Perniola L, Garros X, Buckley J, Gely M, Colonna JP, Grampeix H, Martin F, Vidal V, Toffoli A, Deleonibus S, Ghibaudo G, Pananakakis G, De Salvo B
Solid-State Electronics, 53(7), 786, 2009