검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Amine-functionalized mesoporous silica for urea adsorption Cheah WK, Sim YL, Yeoh FY Materials Chemistry and Physics, 175, 151, 2016 |
| 2 |
1.31 mu m GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy Cheah WK, Fan WJ, Yoon SF, Zhang DH, Ng BK, Loke WK, Liu R, Wee ATS Thin Solid Films, 515(10), 4441, 2007 |
| 3 |
Concomitant incorporation of antimony and nitrogen in GaAsSbN lattice-matched to GaAs Wicaksono S, Yoon SF, Tan KH, Cheah WK Journal of Crystal Growth, 274(3-4), 355, 2005 |
| 4 |
Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy Cheah WK, Fan WJ, Yoon SF, Ng TK, Loke WK, Zhang DH, Mei T, Liu R, Wee ATS Journal of Crystal Growth, 275(3-4), 440, 2005 |
| 5 |
Surfactant and impurity properties of antimony on GaAs and GaAs1-xNx on GaAs [100] by solid source molecular beam epitaxy Cheah WK, Fan WJ, Yoon SF, Tan KH, Liu R, Wee ATS Thin Solid Films, 488(1-2), 56, 2005 |
| 6 |
Co-doping carbon tetrabromide (CBr4) and antimony (Sb) on GaAs [100] in solid source molecular beam epitaxy Cheah WK, Fan WJ, Yoon SF, Liu R, Wee ATS Journal of Crystal Growth, 267(1-2), 364, 2004 |
| 7 |
Determination of nitrogen composition in GaNxAs1-x epilayer on GaAs Fan WJ, Yoon SF, Cheah WK, Loke WK, Ng TK, Wang SZ, Liu R, Wee A Journal of Crystal Growth, 268(3-4), 470, 2004 |
| 8 |
Low antimony-doped GaNxAs1-x on GaAs grown by solid-source molecular-beam epitaxy Cheah WK, Fan WJ, Wicaksono S, Yoon SF, Tan KH Journal of Crystal Growth, 254(3-4), 305, 2003 |