| 1 |
Performance improvement mechanisms of i-ZnO/(NH4)(2)S-x-treated AlGaN MOS diodes
Lee CT, Chiou YL, Lee HY, Chang KJ, Lin JC, Chuang HW
Applied Surface Science, 258(22), 8590, 2012 |
| 2 |
(NH4)(2)S-x-Treated AlGaN/GaN MOS-HEMTs with ZnO Gate Dielectric Layer
Chiou YL, Lee CT
Journal of the Electrochemical Society, 158(2), H156, 2011 |
| 3 |
Frequency and Noise Performances of Photoelectrochemically Etched and Oxidized Gate-Recessed AlGaN/GaN MOS-HEMTs
Chiou YL, Lee CS, Lee CT
Journal of the Electrochemical Society, 158(5), H477, 2011 |
| 4 |
Performance Improved Mechanisms of Chlorine-Treated AlGaN/GaN MOS-HEMTs with ZnO Gate Dielectric Layer
Lee CT, Chiou YL
Journal of the Electrochemical Society, 158(8), H821, 2011 |
| 5 |
Flicker Noises of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
Lee CT, Huang LH, Chiou YL
Journal of the Electrochemical Society, 157(7), H734, 2010 |
| 6 |
Determination of the Fowler-Nordheim tunneling parameters from the Fowler-Nordheim plot
Chiou YL, Gambino JP, Mohammad M
Solid-State Electronics, 45(10), 1787, 2001 |
