검색결과 : 23건
No. | Article |
---|---|
1 |
A Coumarin-based Fluorescence Sensor for the Reversible Detection of Thiols Cho AY, Choi K Chemistry Letters, 41(12), 1611, 2012 |
2 |
In0.68Ga0.32As/Al0.64In0.36As/InP 4.5 mu m quantum cascade lasers grown by solid phosphorus molecular beam epitaxy Chen J, Malis O, Sergent AM, Sivco DL, Weimann N, Cho AY Journal of Vacuum Science & Technology B, 25(3), 913, 2007 |
3 |
Fabrication of high-quality-factor photonic crystal microcavities in InAsP/InGaAsP membranes Srinivasan K, Barclay PE, Painter O, Chen JX, Cho AY Journal of Vacuum Science & Technology B, 22(3), 875, 2004 |
4 |
Fabrication methods for a quantum cascade photonic crystal surface emitting laser Tennant DM, Colombelli R, Srinivasan K, Troccoli M, Painter O, Gmachi C, Capasso F, Sergent AM, Sivco DL, Cho AY Journal of Vacuum Science & Technology B, 21(6), 2907, 2003 |
5 |
Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxy Ng HM, Cho AY Journal of Vacuum Science & Technology B, 20(3), 1217, 2002 |
6 |
Single-crystal GaN/Gd2O3/GaN heterostructure Hong M, Kwo J, Chu SNG, Mannaerts JP, Kortan AR, Ng HM, Cho AY, Anselm KA, Lee CM, Chyi JI Journal of Vacuum Science & Technology B, 20(3), 1274, 2002 |
7 |
Quantum devices, MBE technology for the 21st century Cho AY, Sivco DL, Ng HM, Gmachl C, Tredicucci A, Hutchinson AL, Chu SNG, Capasso F Journal of Crystal Growth, 227, 1, 2001 |
8 |
High-performance planar Al0.48In0.52As/In0.53Ga0.47As high electron mobility transistors Kuo JM, Wang YC, Weiner JS, Sivco D, Cho AY, Chen YK Journal of Crystal Growth, 227, 362, 2001 |
9 |
In situ determination of growth rate by pyrometric interferometry during molecular-beam epitaxy: Application to the growth of AlGaN/GaN quantum wells Ng HM, Chu SNG, Cho AY Journal of Vacuum Science & Technology A, 19(1), 292, 2001 |
10 |
Molecular beam epitaxy of GaN/AlxGa1-xN superlattices for 1.52-4.2 mu m intersubband transitions Ng HM, Gmachl C, Chu SNG, Cho AY Journal of Crystal Growth, 220(4), 432, 2000 |