화학공학소재연구정보센터
검색결과 : 23건
No. Article
1 A Coumarin-based Fluorescence Sensor for the Reversible Detection of Thiols
Cho AY, Choi K
Chemistry Letters, 41(12), 1611, 2012
2 In0.68Ga0.32As/Al0.64In0.36As/InP 4.5 mu m quantum cascade lasers grown by solid phosphorus molecular beam epitaxy
Chen J, Malis O, Sergent AM, Sivco DL, Weimann N, Cho AY
Journal of Vacuum Science & Technology B, 25(3), 913, 2007
3 Fabrication of high-quality-factor photonic crystal microcavities in InAsP/InGaAsP membranes
Srinivasan K, Barclay PE, Painter O, Chen JX, Cho AY
Journal of Vacuum Science & Technology B, 22(3), 875, 2004
4 Fabrication methods for a quantum cascade photonic crystal surface emitting laser
Tennant DM, Colombelli R, Srinivasan K, Troccoli M, Painter O, Gmachi C, Capasso F, Sergent AM, Sivco DL, Cho AY
Journal of Vacuum Science & Technology B, 21(6), 2907, 2003
5 Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxy
Ng HM, Cho AY
Journal of Vacuum Science & Technology B, 20(3), 1217, 2002
6 Single-crystal GaN/Gd2O3/GaN heterostructure
Hong M, Kwo J, Chu SNG, Mannaerts JP, Kortan AR, Ng HM, Cho AY, Anselm KA, Lee CM, Chyi JI
Journal of Vacuum Science & Technology B, 20(3), 1274, 2002
7 Quantum devices, MBE technology for the 21st century
Cho AY, Sivco DL, Ng HM, Gmachl C, Tredicucci A, Hutchinson AL, Chu SNG, Capasso F
Journal of Crystal Growth, 227, 1, 2001
8 High-performance planar Al0.48In0.52As/In0.53Ga0.47As high electron mobility transistors
Kuo JM, Wang YC, Weiner JS, Sivco D, Cho AY, Chen YK
Journal of Crystal Growth, 227, 362, 2001
9 In situ determination of growth rate by pyrometric interferometry during molecular-beam epitaxy: Application to the growth of AlGaN/GaN quantum wells
Ng HM, Chu SNG, Cho AY
Journal of Vacuum Science & Technology A, 19(1), 292, 2001
10 Molecular beam epitaxy of GaN/AlxGa1-xN superlattices for 1.52-4.2 mu m intersubband transitions
Ng HM, Gmachl C, Chu SNG, Cho AY
Journal of Crystal Growth, 220(4), 432, 2000