검색결과 : 52건
| No. | Article |
|---|---|
| 1 |
AlGaN devices and growth of device structures Jones KA, Chow TP, Wraback M, Shatalov M, Sitar Z, Shahedipour F, Udwary K, Tompa GS Journal of Materials Science, 50(9), 3267, 2015 |
| 2 |
Over 1000 V/30 mA operation GaN-on-Si MOSFETs fabricated on Si substrates Niiyama Y, Li ZD, Chow TP, Li JA, Nomura T, Kato S Solid-State Electronics, 56(1), 73, 2011 |
| 3 |
Channel scaling of hybrid GaN MOS-HEMTs Li ZD, Chow TP Solid-State Electronics, 56(1), 111, 2011 |
| 4 |
Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC Jennings MR, Perez-Tomas A, Davies M, Walker D, Zhu L, Losee P, Huang W, Balachandran S, Guy OJ, Covington JA, Chow TP, Mawby PA Solid-State Electronics, 51(5), 797, 2007 |
| 5 |
Characteristics of trench-refilled 4H-SiC p-n junction diodes fabricated by selective epitaxial growth Li C, Losee P, Seiler J, Bhat I, Chow TP Materials Science Forum, 483, 159, 2005 |
| 6 |
Characterization of 4H-SiC epitaxial layers by microwave photoconductivity decay Kumar RJ, Losee PA, Li C, Seiler J, Bhat IB, Chow TP, Borrego JM, Gutmann RJ Materials Science Forum, 483, 405, 2005 |
| 7 |
BVCEO versus BVCBO for 4H and 6H Polytype SiC Bipolar Junction Transistors Balachandran S, Chow TP, Agarwal A, Scozzie S, Jones KA Materials Science Forum, 483, 893, 2005 |
| 8 |
1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs Krishnaswami S, Agarwal A, Capell C, Richmond J, Ryu SH, Palmour J, Balachandran S, Chow TP, Bayne S, Geil B, Jones KA, Scozzie C Materials Science Forum, 483, 901, 2005 |
| 9 |
Low and high temperature performance of 600V 4H-SiC epitaxial emitter BJTs Balachandran S, Chow TP, Agarwal A Materials Science Forum, 483, 909, 2005 |
| 10 |
Comparison of high-voltage 4H-SiC insulated-gate bipolar transistor (IGBT) and MOS-gated bipolar transistor (MGT) Zhu L, Balachandran S, Chow TP Materials Science Forum, 483, 917, 2005 |