검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Adaptive wiring for 20 nm scale epitaxial silicon Ohmic contacts to silicon nanowires Rooks MJ, Cohen GM, Chu JO, Solomon PM, Ott JA, Miller RJ, Viswanathan R, Haensch W Journal of Vacuum Science & Technology B, 25(6), 2572, 2007 |
| 2 |
N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers Mooney PM, Rim K, Christiansen SH, Chan KK, Chu JO, Cai J, Chen H, Jordan-Sweet JL, Yang YY, Boyd DC Solid-State Electronics, 49(10), 1669, 2005 |
| 3 |
Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths Lu W, Koester SJ, Wang XW, Chu JO, Ma TP, Adesida I Journal of Vacuum Science & Technology B, 18(6), 3488, 2000 |
| 4 |
New complimentary metal-oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates Rishton SA, Ismail K, Chu JO, Chan KK, Lee KY Journal of Vacuum Science & Technology B, 15(6), 2795, 1997 |
| 5 |
Roughness Analysis of Si/SiGe Heterostructures Feenstra RM, Lutz MA, Stern F, Ismail K, Mooney PM, Legoues FK, Stanis C, Chu JO, Meyerson BS Journal of Vacuum Science & Technology B, 13(4), 1608, 1995 |