| 1 |
Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate
Kadir A, Srivastava S, Li Z, Lee KEK, Sasangka WA, Gradecak S, Chua SJ, Fitzgerald EA
Thin Solid Films, 663, 73, 2018 |
| 2 |
Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications
Ho JW, Tan RJN, Heuken M, Tay AAO, Chua SJ
Journal of Crystal Growth, 420, 64, 2015 |
| 3 |
Effects of lift-off and strain relaxation on optical properties of InGaN/GaN blue LED grown on 150 mm diameter Si (111) substrate
Liu HF, Seng HL, Teng JH, Chua SJ, Chi DZ
Journal of Crystal Growth, 402, 155, 2014 |
| 4 |
Crystallographic tilt in GaN-on-Si (111) heterostructures grown by metal-organic chemical vapor deposition
Liu HF, Zhang L, Chua SJ, Chi DZ
Journal of Materials Science, 49(9), 3305, 2014 |
| 5 |
Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates
Ho JW, Zhang L, Wee QX, Tay AAO, Heuken M, Chua SJ
Journal of Crystal Growth, 383, 1, 2013 |
| 6 |
Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature
Ngo CY, Yoon SF, Tanoto H, Hui HK, Lim DR, Wong V, Chua SJ
Journal of Crystal Growth, 323(1), 167, 2011 |
| 7 |
Influence of phosphorus doping and post-growth annealing on electrical and optical properties of ZnO/c-sapphire thin films grown by sputtering
Liu HF, Chua SJ
Journal of Crystal Growth, 324(1), 31, 2011 |
| 8 |
Evolution of resonant Raman scattering spectra of ZnO crystallites upon post-growth thermal annealing
Liu HF, Chua SJ, Hu GX, Gong H
Journal of Crystal Growth, 312(4), 527, 2010 |
| 9 |
Optimization of hydrothermal growth ZnO Nanorods for enhancement of light extraction from GaN blue LEDs
Soh CB, Tay CB, Chua SJ, Le HQ, Ang NSS, Teng JH
Journal of Crystal Growth, 312(11), 1848, 2010 |
| 10 |
Optical and Electrical Properties of Ga-Doped ZnO Single Crystalline Films Grown on MgAl2O4(111) by Low Temperature Hydrothermal Synthesis
Le HQ, Lim SK, Goh GKL, Chua SJ, Ong J
Journal of the Electrochemical Society, 157(8), H796, 2010 |
