화학공학소재연구정보센터
검색결과 : 19건
No. Article
1 Dexmedetomidine modulates transient receptor potential vanilloid subtype 1
Lee BM, Jang Y, Park G, Kim K, Oh SH, Shin TJ, Chung G
Biochemical and Biophysical Research Communications, 522(4), 832, 2020
2 Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H-SiC wafers
Yang Y, Guo JQ, Goue O, Raghothamachar B, Dudley M, Chung G, Sanchez E, Quast J, Manning I, Hansen D
Journal of Crystal Growth, 452, 35, 2016
3 Trapezoid defect in 4H-SiC epilayers
Berechman RA, Chung S, Chung G, Sanchez E, Mahadik NA, Stahlbush RE, Skowronski M
Journal of Crystal Growth, 338(1), 16, 2012
4 Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications
Muller GS, Sanchez EK, Hansen DM, Drachev RD, Chung G, Thomas B, Zhang J, Loboda MJ, Dudley M, Wang H, Wu F, Byrappa S, Raghothamachar B, Choi G
Journal of Crystal Growth, 352(1), 39, 2012
5 Mixed-valence tetra- and hexanuclear manganese complexes from the flexibility of pyridine-containing beta-diketone ligands
Yang CI, Wernsdorfer W, Tsai YJ, Chung G, Kuo TS, Lee GH, Shielh M, Tsai HL
Inorganic Chemistry, 47(6), 1925, 2008
6 Origin of basal plane bending in hexagonal silicon carbide single crystals
Lee JW, Skowronski M, Sanchez EK, Chung G
Journal of Crystal Growth, 310(18), 4126, 2008
7 A new hexanuclear manganese complex exhibits superparamagnetic behavior
Yang CI, Chung G, Kuo TS, Shieh M, Tsai HL
Chemistry Letters, 35(7), 724, 2006
8 Analysis of phospholipase D gene from Streptoverticillium reticulum and the effect of biochemical properties of substrates on phospholipase D activity
Uhm TB, Li T, Bao J, Chung G, Ryu DDY
Enzyme and Microbial Technology, 37(6), 641, 2005
9 Comparison of interface state density characterization methods for SiO2/4H-SiC MOS diodes
LaRoche JR, Kim J, Johnson JW, Luo B, Kang BS, Mehandru R, Irokawa Y, Pearton SJ, Chung G, Ren F
Electrochemical and Solid State Letters, 7(2), G21, 2004
10 Influence of PECVD of SiO2 passivation layers on 4H-SiC Schottky rectifiers
Nigam S, Kim J, Ren F, Chung G, MacMillan MF, Pearton SJ
Electrochemical and Solid State Letters, 6(1), G4, 2003