화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Genomic analyses inform on migration events during the peopling of Eurasia
Pagani L, Lawson DJ, Jagoda E, Morseburg A, Eriksson A, Mitt M, Clemente F, Hudjashov G, DeGiorgio M, Saag L, Wall JD, Cardona A, Magi R, Sayres MAW, Kaewert S, Inchley C, Scheib CL, Jarve M, Karmin M, Jacobs GS, Antao T, Iliescu FM, Kushniarevich A, Ayub Q, Tyler-Smith C, Xue YL, Yunusbayev B, Tambets K, Mallick CB, Saag L, Pocheshkhova E, Andriadze G, Muller C, Westaway MC, Lambert DM, Zoraqi G, Turdikulova S, Dalimova D, Sabitov Z, Sultana GNN, Lachance J, Tishkoff S, Momynaliev K, Isakova J, Damba LD, Gubina M, Nymadawa P, Evseeva I, Atramentova L, Utevska O, Ricaut FX, Brucato N, Sudoyo H, Letellier T, Cox MP, Barashkov NA, Skaro V, Mulahasanovic L, Primorac D, Sahakyan H, Mormina M, Eichstaedt CA, Lichman DV, Abdullah S, Chaubey G, Wee JTS, Mihailov E, Karunas A, Litvinov S, Khusainova R, Ekomasova N, Akhmetova V, Khidiyatova I, Marjanovi D, Yepiskoposyan L, Behar DM, Balanovska E, Metspalu A, Derenko M, Malyarchuk B, Voevoda M, Fedorova SA, Osipova LP, Mirazon M, Gerbault P, Leavesley M, Migliano AB, Petraglia M, Balanovsky O, Khusnutdinova EK, Metspalu E, Thomas MG, Manica A, Nielsen R, Villems R, Willerslev E, Kivisild T, Metspalu M
Nature, 538(7624), 238, 2016
2 Degradation of 248 nm Deep UV Photoresist by Ion Implantation
Tsvetanova D, Vos R, Vereecke G, Parac-Vogt TN, Clemente F, Vanstreels K, Radisic D, Conard T, Franquet A, Jivanescu M, Nguyen DAP, Stesmans A, Brijs B, Mertens P, Heyns MM
Journal of the Electrochemical Society, 158(8), H785, 2011
3 Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon
Eyben P, Clemente F, Vanstreels K, Pourtois G, Clarysse T, Duriau E, Hantschel T, Sankaran K, Mody J, Vandervorst W, Mylvaganam K, Zhang LC
Journal of Vacuum Science & Technology B, 28(2), 401, 2010
4 Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase Epitaxy
Cantoro M, Brammertz G, Richard O, Bender H, Clemente F, Leys M, Degroote S, Caymax M, Heyns M, De Gendt S
Journal of the Electrochemical Society, 156(11), H860, 2009
5 High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge
Souriau L, Terzieva V, Vandervorst W, Clemente F, Brijs B, Moussa A, Meuris M, Loo R, Caymax M
Thin Solid Films, 517(1), 23, 2008
6 pMOS transistor with embedded SiGe: Elastic and plastic relaxation issues
Hikavyy A, Bhouri N, Loo R, Verheyen P, Clemente F, Hopkins J, Trussell R, Caymax M
Thin Solid Films, 517(1), 113, 2008
7 Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
Terzieva V, Souriau L, Caymax M, Brunco DP, Moussa A, Van Elshocht S, Loo R, Clemente F, Satta A, Meuris M
Thin Solid Films, 517(1), 172, 2008
8 Time resolved ultraviolet photoluminescence of mesoporous silica
Anedda A, Carbonaro CM, Clemente F, Corpino R, Ricci PC
Journal of Physical Chemistry B, 109(3), 1239, 2005
9 Ultraviolet photoluminescence of silanol species in mesoporous silica
Carbonaro CM, Clemente F, Corpino R, Ricci PC, Anedda A
Journal of Physical Chemistry B, 109(30), 14441, 2005
10 Electrochemically induced surface modifications in boron-doped diamond films: a Raman spectroscopy study
Ricci PC, Anedda A, Carbonaro CM, Clemente F, Corpino R
Thin Solid Films, 482(1-2), 311, 2005