검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Epitaxial growth of three-dimensionally architectured optoelectronic devices Nelson EC, Dias NL, Bassett KP, Dunham SN, Verma V, Miyake M, Wiltzius P, Rogers JA, Coleman JJ, Li XL, Braun PV Nature Materials, 10(9), 676, 2011 |
| 2 |
Analysis of interface layers by spectroscopic ellipsometry Kim TJ, Yoon JJ, Kim YD, Aspnes DE, Klein MV, Ko DS, Kim YW, Elarde VC, Coleman JJ Applied Surface Science, 255(3), 640, 2008 |
| 3 |
InGaAs/GaAs 3D architecture formation by strain-induced self-rolling with lithographically defined rectangular stripe arrays Chun IS, Verma VB, Elarde VC, Kim SW, Zuo JM, Coleman JJ, Li X Journal of Crystal Growth, 310(7-9), 2353, 2008 |
| 4 |
Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth Elarde VC, Yeoh TS, Rangarajan R, Coleman JJ Journal of Crystal Growth, 272(1-4), 148, 2004 |
| 5 |
Quantum Dots Fabricated in InP/InGaAs by Free Cl-2 Gas Etching and Metalorganic Chemical-Vapor-Deposition Regrowth Panepucci R, Reuter E, Fay P, Youtsey C, Kluender J, Caneau C, Coleman JJ, Bishop SG, Adesida I Journal of Vacuum Science & Technology B, 14(6), 3641, 1996 |