검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs Sklenard B, Batude P, Rafhay Q, Martin-Bragado I, Xu CQ, Previtali B, Colombeau B, Khaja FA, Cristoloveanu S, Rivallin P, Tavernier C, Poiroux T Solid-State Electronics, 88, 9, 2013 |
| 2 |
Cryogenic BF2+ Implantation near Amorphization Threshold Dose for Halo Junctions in Sub-30 nm Device Technologies Park HH, Todorov S, Colombeau B, Rodier D, Decker-Lucke K Electrochemical and Solid State Letters, 15(2), H31, 2012 |
| 3 |
Alleviating eSiGe Strain Relaxation Using Cryo-Implantation Yang CL, Li CI, Lin GP, Lai IM, Liu R, Wang HY, Hsu BC, Chan M, Wu JY, Guo BN, Colombeau B, Wu T, Lu S Electrochemical and Solid State Letters, 14(11), H467, 2011 |
| 4 |
The impact of boron halo on phosphorus junction formation and stability Yeong SH, Colombeau B, Mok KRC, Benistant F, Chan L, Srinivasan MP Electrochemical and Solid State Letters, 11(7), H179, 2008 |
| 5 |
Understanding of carbon/fluorine co-implant effect on boron-doped junction formed during soak annealing Yeong SH, Colombeau B, Mok KRC, Benistant F, Liu CJ, Wee ATS, Chan L, Ramam A, Srinivasan MP Journal of the Electrochemical Society, 155(2), H69, 2008 |
| 6 |
Understanding of boron junction stability in preamorphized silicon after optimized flash annealing Yeong SH, Colombeau B, Poon CH, Mok KRC, See A, Benistant F, Tan DXM, Pey KL, Ng CM, Chan L, Srinivasan MP Journal of the Electrochemical Society, 155(7), H508, 2008 |
| 7 |
Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implant Kah M, Smith AJ, Hamilton JJ, Sharp J, Yeong SH, Colombeau B, Gwilliam R, Webb RP, Kirkby KJ Journal of Vacuum Science & Technology B, 26(1), 347, 2008 |
| 8 |
Effect of fluorine on the activation and diffusion behavior of boron implanted preamorphized silicon Paul S, Lerch W, Colombeau B, Cowern NEB, Cristiano F, Boninelli S, Bolze D Journal of Vacuum Science & Technology B, 24(1), 437, 2006 |
| 9 |
Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction Hamilton JJ, Colombeau B, Sharp JA, Cowern NEB, Kirkby KJ, Collart EJH, Bersani M, Giubertoni D Journal of Vacuum Science & Technology B, 24(1), 442, 2006 |
| 10 |
Transient enhanced diffusion of B at low temperatures under extrinsic conditions Giles LF, Colombeau B, Cowern N, Molzer W, Schaefer H, Bach KH, Haibach P, Roozeboom F Solid-State Electronics, 49(4), 618, 2005 |