화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs
Koyama M, Casse M, Coquand R, Barraud S, Vizioz C, Comboroure C, Perreau P, Maffini-Alvaro V, Tabone C, Tosti L, Barnola S, Delaye V, Aussenac F, Ghibaudo G, Iwai H, Reimbold G
Solid-State Electronics, 84, 46, 2013
2 Scaling of high-kappa/metal-gate TriGate SOI nanowire transistors down to 10 nm width
Coquand R, Barraud S, Casse M, Leroux P, Vizioz C, Comboroure C, Perreau P, Ernst E, Samson MP, Maffini-Alvaro V, Tabone C, Barnola S, Munteanu D, Ghibaudo G, Monfray S, Boeuf F, Poiroux T
Solid-State Electronics, 88, 32, 2013
3 Hybrid high resolution lithography (e-beam/deep ultraviolet) and etch process for the fabrication of stacked nanowire metal oxide semiconductor field effect transistors
Pauliac-Vaujour S, Comboroure C, Vizioz C, Barnola S, Brianceau P, Alvaro VM, Dupre C, Ernst T
Journal of Vacuum Science & Technology B, 26(6), 2583, 2008