| 1 |
Comparison of data driven modeling approaches for temperature prediction in data centers
Athavale J, Yoda M, Joshi Y
International Journal of Heat and Mass Transfer, 135, 1039, 2019 |
| 2 |
A charge-based model of Junction Barrier Schottky rectifiers
Latorre-Rey AD, Mudholkar M, Quddus MT, Salih A
Solid-State Electronics, 144, 67, 2018 |
| 3 |
Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport
Oproglidis TA, Karatsori TA, Barraud S, Ghibaudo G, Dimitriadis CA
Solid-State Electronics, 142, 25, 2018 |
| 4 |
Compact model for non-local avalanche effect in advanced bipolar transistors: An assessment of the relaxation length and its temperature dependence
Setekera R, van der Toorn R
Solid-State Electronics, 119, 39, 2016 |
| 5 |
Determining the base resistance of InP HBTs: An evaluation of methods and structures
Nardmann T, Krause J, Pawlak A, Schroter M
Solid-State Electronics, 123, 68, 2016 |
| 6 |
A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors
Moldovan O, Castro-Carranza A, Cerdeira A, Estrada M, Barquinha P, Martins R, Fortunato E, Miljakovic S, Iniguez B
Solid-State Electronics, 126, 81, 2016 |
| 7 |
Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III-V technology
Hiblot G, Lacord J, Akbal M, Rafhay Q, Boeuf F, Ghibaudo G
Solid-State Electronics, 107, 1, 2015 |
| 8 |
Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials
Hiblot G, Rafhay Q, Boeuf F, Ghibaudo G
Solid-State Electronics, 111, 188, 2015 |
| 9 |
3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs, including simple treatment of quantization effects
Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 112, 85, 2015 |
| 10 |
Analytical model for the threshold voltage of III-V nanowire transistors including quantum effects
Marin EG, Ruiz FG, Tienda-Luna IM, Godoy A, Gamiz F
Solid-State Electronics, 92, 28, 2014 |
