검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Interstitial Fe-pairs in silicon Al-Ani OA, Goss JP, Briddon PR, Rayson MJ, Cowern NEB Journal of Crystal Growth, 468, 54, 2017 |
| 2 |
Voids in silicon as a sink for interstitial iron: a density functional study Al-Ani OA, Goss JP, Al-Hadidi M, Briddon PR, Rayson MJ, Cowern NEB Journal of Crystal Growth, 468, 101, 2017 |
| 3 |
Impact of grain boundary structures on trapping iron Al-Ani OA, Goss JP, Al-Hadidi M, Briddon PR, Rayson MJ, Cowern NEB Journal of Crystal Growth, 468, 448, 2017 |
| 4 |
Review of electrical characterization of ultra-shallow junctions with micro four-point probes Petersen DH, Hansen O, Hansen TM, Boggild P, Lin R, Kjaer D, Nielsen PF, Clarysse T, Vandervorst W, Rosseel E, Bennett NS, Cowern NEB Journal of Vacuum Science & Technology B, 28(1), C1C27, 2010 |
| 5 |
Overlayer stress effects on defect formation in Si and Ge Cowern NEB, Bennett NS, Ahn C, Yoon JC, Hamm S, Lerch W, Kheyrandish H, Cristiano F, Pakfar A Thin Solid Films, 518(9), 2442, 2010 |
| 6 |
Transient activation model for antimony in relaxed and strained silicon Lai Y, Bennett NS, Ahn C, Cowern NEB, Cordero N, Greer JC Solid-State Electronics, 53(11), 1173, 2009 |
| 7 |
Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic? Bennett NS, Smith AJ, Gwilliam RM, Webb RP, Sealy BJ, Cowern NEB, O'Reilly L, McNally PJ Journal of Vacuum Science & Technology B, 26(1), 391, 2008 |
| 8 |
Enhanced n-type dopant solubility in tensile-strained Si Bennett NS, Radamson HH, Beer CS, Smith AJ, Gwilliam RM, Cowern NEB, Sealy BJ Thin Solid Films, 517(1), 331, 2008 |
| 9 |
Influence of F+ co-implants on EOR defect formation in B+-implanted, ultrashallow junctions Boninelli S, Cristiano F, Lerch W, Paul S, Cowern NEB Electrochemical and Solid State Letters, 10(9), H264, 2007 |
| 10 |
Effect of fluorine on the activation and diffusion behavior of boron implanted preamorphized silicon Paul S, Lerch W, Colombeau B, Cowern NEB, Cristiano F, Boninelli S, Bolze D Journal of Vacuum Science & Technology B, 24(1), 437, 2006 |